DMP2110UFDB-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
$0.10
Available to order
Reference Price (USD)
1+
$0.10033
500+
$0.0993267
1000+
$0.0983234
1500+
$0.0973201
2000+
$0.0963168
2500+
$0.0953135
Exquisite packaging
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Optimize your electronic circuits with Diodes Incorporated s DMP2110UFDB-13, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMP2110UFDB-13 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V
- Power - Max: 820mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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