DMT10H072LFDF-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 4A 6UDFN
$0.27
Available to order
Reference Price (USD)
10,000+
$0.28036
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
DMT10H072LFDF-13 by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMT10H072LFDF-13 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
Vishay Siliconix
IRF614SPBF
Vishay Siliconix
SI3430DV-T1-GE3
Rectron USA
RM42N200DF
Vishay Siliconix
SQS460ENW-T1_GE3
onsemi
MTW16N40E
Panjit International Inc.
PJC7410_R1_00001
Panjit International Inc.
PJP4NA65_T0_00001
Taiwan Semiconductor Corporation
TSM80N950CI C0G
IXYS
IXTA20N65X2
Infineon Technologies