DMT3009LFVWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 12A PWRDI3333
$0.29
Available to order
Reference Price (USD)
2,000+
$0.31108
Exquisite packaging
Discount
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Experience the power of DMT3009LFVWQ-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMT3009LFVWQ-7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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