DMT3009UDT-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V V-DFN3030-
$0.36
Available to order
Reference Price (USD)
1+
$0.36344
500+
$0.3598056
1000+
$0.3561712
1500+
$0.3525368
2000+
$0.3489024
2500+
$0.345268
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMT3009UDT-7 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMT3009UDT-7 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
- Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V
- Power - Max: 1.1W (Ta), 16W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: V-DFN3030-8 (Type KS)
Related Products
Microchip Technology
APTM10DHM05G
Diodes Incorporated
DMT6018LDR-13
Harris Corporation
RFP50N06R4034
Harris Corporation
RFP40N10S5001
Fairchild Semiconductor
IRF630A_CP001
onsemi
MTB6N60ET4
onsemi
CPH5614-TL-E-ON
Infineon Technologies
AUIRFN8458TRXTMA1
onsemi
NTTBC070NP10M5L
onsemi