DMT3020LFDB-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CHA 30V 7.7A DFN2020
$0.22
Available to order
Reference Price (USD)
1+
$0.21645
500+
$0.2142855
1000+
$0.212121
1500+
$0.2099565
2000+
$0.207792
2500+
$0.2056275
Exquisite packaging
Discount
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Boost your project s performance with Diodes Incorporated s DMT3020LFDB-13, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, DMT3020LFDB-13 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of DMT3020LFDB-13.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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