DMT3020UFDB-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V U-DFN2020-
$0.18
Available to order
Reference Price (USD)
1+
$0.17565
500+
$0.1738935
1000+
$0.172137
1500+
$0.1703805
2000+
$0.168624
2500+
$0.1668675
Exquisite packaging
Discount
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The DMT3020UFDB-13 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMT3020UFDB-13 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
- Power - Max: 860mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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