DMT6009LK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 13.3A/57A TO252
$1.06
Available to order
Reference Price (USD)
2,500+
$0.48024
5,000+
$0.45899
12,500+
$0.44381
25,000+
$0.44160
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with DMT6009LK3-13 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMT6009LK3-13 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IRLZ44ZPBF
Rectron USA
RM20N60LD
Infineon Technologies
AUIRFR540ZTRL
Toshiba Semiconductor and Storage
TK20J60W,S1VE
Panasonic Electronic Components
SK8603170L
Infineon Technologies
IPP65R190E6XKSA1
onsemi
FCD900N60Z
Alpha & Omega Semiconductor Inc.
AOB160A60L
Nexperia USA Inc.
NX138BKWX
NXP USA Inc.