DMT64M8LSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V SO-8 T&R 2
$0.39
Available to order
Reference Price (USD)
1+
$0.39270
500+
$0.388773
1000+
$0.384846
1500+
$0.380919
2000+
$0.376992
2500+
$0.373065
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with DMT64M8LSS-13 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMT64M8LSS-13 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2664 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Panjit International Inc.
PJW3P06A_R2_00001
Microchip Technology
APT10035B2FLLG
Infineon Technologies
IRFP4229PBF
onsemi
FDP12N50NZ
onsemi
FDMS86550ET60
Fairchild Semiconductor
HUF75637P3
Vishay Siliconix
IRFBC40STRLPBF
Infineon Technologies
IRFS4321TRLPBF
Nexperia USA Inc.
PSMN3R9-100YSFX
Toshiba Semiconductor and Storage