DMTH10H017LPDQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
$0.77
Available to order
Reference Price (USD)
1+
$0.77235
500+
$0.7646265
1000+
$0.756903
1500+
$0.7491795
2000+
$0.741456
2500+
$0.7337325
Exquisite packaging
Discount
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Boost your project s performance with Diodes Incorporated s DMTH10H017LPDQ-13, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, DMTH10H017LPDQ-13 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of DMTH10H017LPDQ-13.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
- Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
- Power - Max: 1.5W (Ta), 93W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type E)
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