DMTH10H2M5STLWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V,POWERDI10
$4.90
Available to order
Reference Price (USD)
1+
$4.90000
500+
$4.851
1000+
$4.802
1500+
$4.753
2000+
$4.704
2500+
$4.655
Exquisite packaging
Discount
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Upgrade your electronic designs with DMTH10H2M5STLWQ-13 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMTH10H2M5STLWQ-13 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-363
- Package / Case: 6-TSSOP, SC-88, SOT-363
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