DMTH8028LPSWQ-13
Diodes Incorporated

Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
$0.27
Available to order
Reference Price (USD)
1+
$0.26972
500+
$0.2670228
1000+
$0.2643256
1500+
$0.2616284
2000+
$0.2589312
2500+
$0.256234
Exquisite packaging
Discount
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Experience the power of DMTH8028LPSWQ-13, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMTH8028LPSWQ-13 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 41.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 65W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN