DSS4160FDB-7
Diodes Incorporated
Diodes Incorporated
TRANS NPH U-DFN2020-6
$0.64
Available to order
Reference Price (USD)
3,000+
$0.25128
6,000+
$0.23684
15,000+
$0.22241
30,000+
$0.22000
Exquisite packaging
Discount
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Enhance your electronic systems with Diodes Incorporated's DSS4160FDB-7 BJT Arrays, featuring advanced technology and robust performance. These arrays offer fast switching, high gain bandwidth, and excellent linearity, making them suitable for high-frequency and precision applications. Widely used in automotive electronics, industrial controls, and wearable devices. Ready to order? Request a quote or contact our support team for assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
- Power - Max: 405mW
- Frequency - Transition: 175MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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