DSS45160FDB-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 1A 60V U-DFN2020-6
$0.64
Available to order
Reference Price (USD)
3,000+
$0.25128
6,000+
$0.23684
15,000+
$0.22241
30,000+
$0.22000
Exquisite packaging
Discount
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Achieve peak performance with Diodes Incorporated's DSS45160FDB-7 BJT Arrays, crafted for precision and durability. These arrays feature high-speed operation, low thermal resistance, and excellent matching properties, ensuring consistent results in critical applications. Commonly utilized in data acquisition, telecommunications, and energy management systems. Contact us today to discuss your project requirements and discover how we can help you succeed!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A, 550mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
- Power - Max: 405mW
- Frequency - Transition: 175MHz, 65MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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