DTA123JET1
onsemi
onsemi
TRANS PREBIAS PNP 200MW SC75
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the DTA123JET1 from onsemi for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. onsemi is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75, SOT-416
Related Products
Diodes Incorporated
DDTC144ELP-7
onsemi
NSVMMUN2237LT1G
Rohm Semiconductor
DTC143TUBTL
Nexperia USA Inc.
PDTA144VM,315
onsemi
NSVMMUN2212LT1G
onsemi
NSB9435T1G
Toshiba Semiconductor and Storage
RN2317(TE85L,F)
Rohm Semiconductor
DTC123JU3T106
Toshiba Semiconductor and Storage
RN2404,LXHF
Toshiba Semiconductor and Storage