DXT5551-13
Diodes Incorporated
Diodes Incorporated
TRANS NPN 160V 0.6A SOT89-3
$0.49
Available to order
Reference Price (USD)
2,500+
$0.15460
5,000+
$0.14620
12,500+
$0.13780
25,000+
$0.12800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with DXT5551-13 from Diodes Incorporated, a premier provider of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single feature low saturation voltage and high efficiency, making them ideal for energy-sensitive projects. Suitable for both commercial and industrial uses, DXT5551-13 guarantees performance and longevity. Interested? Send us an inquiry and let Diodes Incorporated support your next project.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
Related Products
Microchip Technology
2N3500U4/TR
Microchip Technology
JAN2N6341
onsemi
MMBTA06LT3G
Diodes Incorporated
FMMT555TC
Nexperia USA Inc.
PMMT491A,235
onsemi
MJL21193G
Infineon Technologies
BCW60BE6327
Nexperia USA Inc.
BC847AQAZ
NTE Electronics, Inc
NTE2319MP
Diodes Incorporated