DXTC3C100PD-13
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR POWERDI506
$0.26
Available to order
Reference Price (USD)
1+
$0.25560
500+
$0.253044
1000+
$0.250488
1500+
$0.247932
2000+
$0.245376
2500+
$0.24282
Exquisite packaging
Discount
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The DXTC3C100PD-13 Bipolar Junction Transistor Arrays from Diodes Incorporated are built for high-efficiency and long-lasting operation. Key benefits include matched transistor pairs, low distortion, and wide operating temperature range, ideal for RF and power amplification. Commonly found in broadcasting equipment, instrumentation, and security systems. Interested in learning more? Submit an inquiry and our experts will guide you through the selection process!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A, 325mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V
- Power - Max: 1.47W
- Frequency - Transition: 130MHz, 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type UXD)
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