DXTN10060DFJBQ-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN 60V 4A 3DFN
$0.51
Available to order
Reference Price (USD)
1+
$0.51000
500+
$0.5049
1000+
$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
Exquisite packaging
Discount
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Upgrade your electronic projects with DXTN10060DFJBQ-7 by Diodes Incorporated, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, DXTN10060DFJBQ-7 provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the Diodes Incorporated difference.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V
- Power - Max: 1.8 W
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-3 (Type B)
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