DXTN10060DFJBWQ-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN 60V 4A 3DFN
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
Discount
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Looking for reliable transistors? Choose DXTN10060DFJBWQ-7 by Diodes Incorporated, a standout in the Discrete Semiconductor Products market. These Transistors - Bipolar (BJT) - Single are known for their high current capacity and thermal stability, perfect for demanding applications. From power supplies to motor control, DXTN10060DFJBWQ-7 delivers unmatched quality. Get started today contact us for a personalized quote and discover why Diodes Incorporated is the preferred choice.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V
- Power - Max: 1.8 W
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: W-DFN2020-3 (Type A)
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