DXTN5860DFDB-7
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR U-DFN2020-
$0.20
Available to order
Reference Price (USD)
1+
$0.19519
500+
$0.1932381
1000+
$0.1912862
1500+
$0.1893343
2000+
$0.1873824
2500+
$0.1854305
Exquisite packaging
Discount
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Optimize your designs with DXTN5860DFDB-7 by Diodes Incorporated, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, DXTN5860DFDB-7 is the perfect fit. Contact us today to learn more and place your order with Diodes Incorporated.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 315mV @ 300mA, 6A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
- Power - Max: 690 mW
- Frequency - Transition: 115MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-3 (Type B)
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