EMG11T2R
Rohm Semiconductor
Rohm Semiconductor
TRANS 2NPN PREBIAS 0.15W EMT5
$0.39
Available to order
Reference Price (USD)
8,000+
$0.09180
16,000+
$0.08370
24,000+
$0.07830
56,000+
$0.07560
Exquisite packaging
Discount
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Upgrade to Rohm Semiconductor's premium EMG11T2R BJT Arrays for unmatched performance in discrete semiconductor applications. These pre-biased transistor pairs deliver consistent results in amplification and switching tasks, featuring optimized base-emitter resistors for immediate circuit integration. Perfect for use in voltage regulators, relay drivers, and signal conditioning circuits within consumer electronics and embedded systems. The product line boasts high power dissipation, wide operating temperature ranges, and moisture-resistant packaging. As an industry leader, Rohm Semiconductor provides technical documentation and design support for all EMG11T2R applications. Start your order process submit an inquiry to receive customized solutions!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (5 Leads), Flat Lead
- Supplier Device Package: EMT5
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