EMH11FHAT2R
Rohm Semiconductor
Rohm Semiconductor
NPN+NPN DIGITAL TRANSISTOR (CORR
$0.34
Available to order
Reference Price (USD)
8,000+
$0.05200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Rohm Semiconductor's EMH11FHAT2R advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Rohm Semiconductor stands behind every EMH11FHAT2R unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
Related Products
Nexperia USA Inc.
PUMD15,115
onsemi
MUN5311DW1T1G
Diodes Incorporated
DCX115EU-7-F
Toshiba Semiconductor and Storage
RN1907,LXHF(CT
Rohm Semiconductor
EMB10T2R
Diodes Incorporated
DDC114EH-7
onsemi
IMH20TR1G
Rohm Semiconductor
UMD3NTR
Toshiba Semiconductor and Storage
RN1610(TE85L,F)
Diodes Incorporated