EMH1T2R
Rohm Semiconductor
Rohm Semiconductor
TRANS 2NPN PREBIAS 0.15W EMT6
$0.11
Available to order
Reference Price (USD)
8,000+
$0.09690
16,000+
$0.08835
24,000+
$0.08265
56,000+
$0.07980
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with Rohm Semiconductor's EMH1T2R Pre-Biased BJT Arrays the perfect solution for space-constrained applications. These discrete semiconductor products deliver optimized performance with built-in bias resistors, simplifying your PCB layout while ensuring stable operation. Key features include high current gain, low leakage current, and excellent temperature characteristics. Widely used in LED drivers, interface circuits, and logic level conversion across telecom, automation, and IoT devices. Trust Rohm Semiconductor's expertise in transistor technology for your next project. Ready to order or need technical support? Send us your inquiry today!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
Related Products
Toshiba Semiconductor and Storage
RN2906,LXHF(CT
Panasonic Electronic Components
UP0421100L
Rohm Semiconductor
EMH61T2R
onsemi
NSBC114TDXV6T1
Nexperia USA Inc.
PBLS4004Y,115
Nexperia USA Inc.
PRMD3Z
onsemi
NSBC124XDXV6T1G
Diodes Incorporated
DEMD48-7
Toshiba Semiconductor and Storage
RN2709,LF
Toshiba Semiconductor and Storage