EPC2001C
EPC
EPC
GANFET N-CH 100V 36A DIE OUTLINE
$4.93
Available to order
Reference Price (USD)
2,500+
$2.25400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with EPC2001C, a reliable Transistors - FETs, MOSFETs - Single by EPC. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, EPC2001C meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (11-Solder Bar)
- Package / Case: Die
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