EPC2035
EPC
EPC
GANFET N-CH 60V 1.7A DIE
$0.97
Available to order
Reference Price (USD)
2,500+
$0.34075
5,000+
$0.32900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of EPC2035, a premium Transistors - FETs, MOSFETs - Single from EPC. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, EPC2035 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
Sanken
2SK3710
Infineon Technologies
BSF024N03LT3GXUMA1
Toshiba Semiconductor and Storage
TPH5900CNH,L1Q
Vishay Siliconix
SI4155DY-T1-GE3
Renesas Electronics America Inc
UPA572T(0)-T1-A
Alpha & Omega Semiconductor Inc.
AON6366E
onsemi
2SK4197FS
Diodes Incorporated
DMPH4015SSSQ-13
STMicroelectronics
STFI6N65K3
Microchip Technology