EPC2066
EPC
EPC
TRANSISTOR GAN 40V .001OHM
$6.54
Available to order
Reference Price (USD)
1+
$6.54000
500+
$6.4746
1000+
$6.4092
1500+
$6.3438
2000+
$6.2784
2500+
$6.213
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose EPC2066 by EPC. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with EPC2066 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 28mA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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