EPC2101
EPC
EPC
GAN TRANS ASYMMETRICAL HALF BRID
$9.16
Available to order
Reference Price (USD)
500+
$4.77400
1,000+
$4.31200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the next level of semiconductor technology with EPC s EPC2101, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for EPC2101.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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