EPC2101ENGRT
EPC
EPC
GAN TRANS ASYMMETRICAL HALF BRID
$0.00
Available to order
Reference Price (USD)
500+
$4.77400
1,000+
$4.31200
Exquisite packaging
Discount
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Optimize your electronic circuits with EPC s EPC2101ENGRT, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how EPC2101ENGRT can elevate your design and operational efficiency.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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