Shopping cart

Subtotal: $0.00

ES1B-M3/5AT

Vishay General Semiconductor - Diodes Division
ES1B-M3/5AT Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO214AC
$0.10
Available to order
Reference Price (USD)
22,500+
$0.08845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Comchip Technology

CDBF0245

Global Power Technology-GPT

G3S12003H

Yangzhou Yangjie Electronic Technology Co.,Ltd

RB751V-40-F2-0000HF

Nexperia USA Inc.

PMEG150G30ELP-QX

Taiwan Semiconductor Corporation

MUR320SBH

Micro Commercial Co

SK16-LTP

Micro Commercial Co

HER202G-TP

Nexperia USA Inc.

BAS16GWX

Rohm Semiconductor

RBR1VWM30ATFTR

Infineon Technologies

IDDD20G65C6XTMA1

Top