ES1BL R3G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
$0.69
Available to order
Reference Price (USD)
1,800+
$0.10889
3,600+
$0.09608
5,400+
$0.08754
12,600+
$0.07900
45,000+
$0.07473
90,000+
$0.07046
Exquisite packaging
Discount
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Discover high-quality ES1BL R3G Single Rectifier Diodes from Taiwan Semiconductor Corporation, designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, Taiwan Semiconductor Corporation's ES1BL R3G delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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