ESH1DM RSG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A MICRO SMA
$0.50
Available to order
Reference Price (USD)
3,000+
$0.10312
6,000+
$0.09809
15,000+
$0.09054
30,000+
$0.08551
75,000+
$0.08300
Exquisite packaging
Discount
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Revolutionize your power electronics with Taiwan Semiconductor Corporation's ESH1DM RSG Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Taiwan Semiconductor Corporation provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 3pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: Micro SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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