Shopping cart

Subtotal: $0.00

ESH3BHE3_A/I

Vishay General Semiconductor - Diodes Division
ESH3BHE3_A/I Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3A DO214AB
$0.32
Available to order
Reference Price (USD)
3,500+
$0.28188
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-3EYH01-M3/I

Comchip Technology

ACDBA3100-HF

Vishay General Semiconductor - Diodes Division

1N4007-E3/53

Taiwan Semiconductor Corporation

RS2GAL

Panjit International Inc.

PCDP20120G1_T0_00001

Taiwan Semiconductor Corporation

S15GCHV7G

Vishay General Semiconductor - Diodes Division

V15P45-M3/86A

Top