Shopping cart

Subtotal: $0.00

F1T6GH

Taiwan Semiconductor Corporation
F1T6GH Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A TS-1
$0.08
Available to order
Reference Price (USD)
1+
$0.08435
500+
$0.0835065
1000+
$0.082663
1500+
$0.0818195
2000+
$0.080976
2500+
$0.0801325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Nexperia USA Inc.

BAS70W,115

Infineon Technologies

IDWD15G120C5XKSA1

Vishay General Semiconductor - Diodes Division

MB10H100HE3_B/I

Microchip Technology

JANTXV1N6626/TR

NTE Electronics, Inc

1N4005

Microchip Technology

1N6640US

UnitedSiC

UJ3D1220K2

Vishay General Semiconductor - Diodes Division

VS-HFA08SD60STR-M3

Comchip Technology

6A10-G

Vishay General Semiconductor - Diodes Division

VS-175BGQ045HF4

Top