F4100R12KS4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 130A 660W
$160.45
Available to order
Reference Price (USD)
10+
$162.06900
Exquisite packaging
Discount
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The F4100R12KS4BOSA1 from Infineon Technologies sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Infineon Technologies for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 130 A
- Power - Max: 660 W
- Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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