FCHD125N65S3R0-F155
onsemi
onsemi
MOSFET N-CH 650V 24A TO247
$4.62
Available to order
Reference Price (USD)
1+
$4.62000
500+
$4.5738
1000+
$4.5276
1500+
$4.4814
2000+
$4.4352
2500+
$4.389
Exquisite packaging
Discount
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Discover FCHD125N65S3R0-F155, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 590µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 181W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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