FCMT360N65S3
onsemi
onsemi
MOSFET N-CH 650V 10A 4PQFN
$1.34
Available to order
Reference Price (USD)
1+
$1.34051
500+
$1.3271049
1000+
$1.3136998
1500+
$1.3002947
2000+
$1.2868896
2500+
$1.2734845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents FCMT360N65S3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FCMT360N65S3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-PQFN (8x8)
- Package / Case: 4-PowerTSFN
Related Products
Diodes Incorporated
DMN63D1L-13
Infineon Technologies
IPU60R2K0C6BKMA1
Sanyo
BFL4007
Infineon Technologies
IPP028N08N3GXKSA1
Infineon Technologies
IRF250P224
Vishay Siliconix
SIHD12N50E-GE3
Nexperia USA Inc.
PSMN1R0-25YLDX
STMicroelectronics
STD10P10F6
Rohm Semiconductor
RQ3E180BNTB
Microchip Technology