FCP110N65F
onsemi
onsemi
MOSFET N-CH 650V 35A TO220-3
$4.55
Available to order
Reference Price (USD)
1+
$4.62000
10+
$4.14200
100+
$3.42020
800+
$2.53779
1,600+
$2.37735
Exquisite packaging
Discount
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Boost your electronic applications with FCP110N65F, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FCP110N65F meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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