FCPF190N60E
onsemi
onsemi
MOSFET N-CH 600V 20.6A TO220F
$3.13
Available to order
Reference Price (USD)
1+
$3.11000
10+
$2.82100
100+
$2.28240
500+
$1.79294
1,000+
$1.49931
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FCPF190N60E by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FCPF190N60E inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3
- Package / Case: TO-220-3 Full Pack
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