FD150R12RT4HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 150A 790W
$76.52
Available to order
Reference Price (USD)
1+
$54.37000
10+
$51.07600
Exquisite packaging
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Infineon Technologies's FD150R12RT4HOSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 790 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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