FDB070AN06A0
onsemi
onsemi
MOSFET N-CH 60V 15A/80A D2PAK
$3.38
Available to order
Reference Price (USD)
800+
$1.43553
1,600+
$1.32323
2,400+
$1.23685
5,600+
$1.19366
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FDB070AN06A0, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FDB070AN06A0 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STD12N65M2
onsemi
NTMFS5C460NLT3G
Diodes Incorporated
DMT3009LFVW-7
Rohm Semiconductor
R6011ENJTL
Vishay Siliconix
SI4386DY-T1-E3
STMicroelectronics
STD7N80K5
STMicroelectronics
STLD125N4F6AG
NXP USA Inc.
BUK9E4R9-60E,127
Panjit International Inc.
PJD30N15_L2_00001
STMicroelectronics