FDB2710
onsemi
onsemi
MOSFET N-CH 250V 50A D2PAK
$6.03
Available to order
Reference Price (USD)
800+
$3.60180
1,600+
$3.37410
2,400+
$3.21471
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FDB2710, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FDB2710 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 260W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SQM40014EM_GE3
Fairchild Semiconductor
FQPF9N50YDTU
Taiwan Semiconductor Corporation
TSM900N10CH X0G
onsemi
2N7000TA
Fairchild Semiconductor
FDT461N
Infineon Technologies
IRF540NLPBF
Nexperia USA Inc.
PXN6R7-30QLJ
Vishay Siliconix
SIDR5102EP-T1-RE3
Vishay Siliconix
SQ4850EY-T1_BE3
NXP USA Inc.