FDB33N25TM
onsemi
onsemi
MOSFET N-CH 250V 33A D2PAK
$2.29
Available to order
Reference Price (USD)
800+
$1.15578
1,600+
$1.06068
2,400+
$0.98753
5,600+
$0.95095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDB33N25TM by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDB33N25TM inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 235W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SIHD1K4N60E-GE3
Rohm Semiconductor
R8002ANJFRGTL
Microchip Technology
APT19M120J
onsemi
FDMS7580
Diodes Incorporated
DMTH6009LK3-13
Micro Commercial Co
MSJP20N65-BP
Infineon Technologies
BSC123N10LSGATMA1
Microchip Technology
APT47M60J
IXYS
IXFN320N17T2
Goford Semiconductor