FDB603AL
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$1.12
Available to order
Reference Price (USD)
1+
$1.12000
500+
$1.1088
1000+
$1.0976
1500+
$1.0864
2000+
$1.0752
2500+
$1.064
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
FDB603AL by Fairchild Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FDB603AL ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Nexperia USA Inc.
BUK9832-55A/CUX
STMicroelectronics
STD95NH02LT4
Toshiba Semiconductor and Storage
TPH1110FNH,L1Q
IXYS
IXFR32N100Q3
Microchip Technology
APT20M22JVRU3
onsemi
PCP1405-TD-H
Vishay Siliconix
SISS12DN-T1-GE3
Infineon Technologies
BSP125L6327HTSA1
Rohm Semiconductor
QS5U17TR
IXYS