FDB6670AL
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 30V 80A TO263AB
$1.00
Available to order
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$0.99
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$0.98
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$0.97
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$0.96
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$0.95
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Fairchild Semiconductor presents FDB6670AL, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FDB6670AL delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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