FDC654P
onsemi
onsemi
MOSFET P-CH 30V 3.6A SUPERSOT6
$0.58
Available to order
Reference Price (USD)
3,000+
$0.17562
6,000+
$0.16429
15,000+
$0.15296
30,000+
$0.14502
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with FDC654P, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust FDC654P for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 75mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT™-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Microchip Technology
APT58F50J
Toshiba Semiconductor and Storage
SSM3K62TU,LF
Microchip Technology
TN0106N3-G-P013
Diodes Incorporated
DMT10H032LSS-13
Harris Corporation
IRF341
Vishay Siliconix
IRLZ14SPBF
Infineon Technologies
IRFS4127TRLPBF
Infineon Technologies
BSZ024N04LS6ATMA1
Vishay Siliconix
SQJQ410EL-T1_GE3
Renesas Electronics America Inc