FDD3510H
onsemi
onsemi
MOSFET N/P-CH 80V 4.3/2.8A TO252
$1.25
Available to order
Reference Price (USD)
2,500+
$0.53529
5,000+
$0.51001
12,500+
$0.49194
Exquisite packaging
Discount
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The FDD3510H from onsemi is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, FDD3510H offers the reliability you need. Contact us now to discuss how we can support your project requirements with onsemi s cutting-edge solutions.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel, Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A
- Rds On (Max) @ Id, Vgs: 80mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252 (DPAK)
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