FDD3860
onsemi
onsemi
MOSFET N-CH 100V 6.2A DPAK
$1.26
Available to order
Reference Price (USD)
2,500+
$0.56235
5,000+
$0.53579
12,500+
$0.51681
Exquisite packaging
Discount
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Optimize your electronic systems with FDD3860, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, FDD3860 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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