FDME1023PZT
onsemi
onsemi
MOSFET 2P-CH 20V 2.6A 6MICROFET
$0.93
Available to order
Reference Price (USD)
5,000+
$0.25245
10,000+
$0.24310
25,000+
$0.23800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic circuits with onsemi s FDME1023PZT, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how FDME1023PZT can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.6A
- Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
- Power - Max: 600mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-MicroFET (1.6x1.6)
Related Products
Diodes Incorporated
DMN2029USD-13
Vishay Siliconix
SI4214DDY-T1-GE3
Microchip Technology
MSCM20XM10T3XG
Rohm Semiconductor
SP8K24FRATB
Fairchild Semiconductor
FDMJ1023PZ
Diodes Incorporated
DMN3032LFDB-7
Infineon Technologies
IPG20N04S409ATMA1
Vishay Siliconix
SI4963BDY-T1-GE3
onsemi
FDMD86100
Texas Instruments