FDMS86202ET120
onsemi
onsemi
MOSFET N-CH 120V 13.5/102A PWR56
$6.61
Available to order
Reference Price (USD)
3,000+
$2.17548
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
FDMS86202ET120 by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FDMS86202ET120 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
Related Products
onsemi
FDB035AN06A0
onsemi
FDD7N25LZTM
Fairchild Semiconductor
FQD4N25TM
Infineon Technologies
AUIRF7665S2TR
Rohm Semiconductor
RXL035N03TCR
Texas Instruments
CSD17382F4T
Vishay Siliconix
IRF9530PBF
Nexperia USA Inc.
2N7002BKW,115
Infineon Technologies
BSZ100N06LS3GATMA1
onsemi