FDN306P
onsemi
onsemi
MOSFET P-CH 12V 2.6A SUPERSOT3
$0.50
Available to order
Reference Price (USD)
3,000+
$0.16078
6,000+
$0.15041
15,000+
$0.14004
30,000+
$0.13277
75,000+
$0.13202
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
FDN306P by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FDN306P ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Toshiba Semiconductor and Storage
SSM6J215FE(TE85L,F
Fairchild Semiconductor
FDS6690A-NBNP006
Vishay Siliconix
SIHP23N60E-GE3
Infineon Technologies
IRFS7787PBF
Panjit International Inc.
PJD60R620E_L2_00001
Fairchild Semiconductor
FQPF13N50
Linear Integrated Systems, Inc.
SD210DE TO-72 4L
onsemi
FQP22N30
Taiwan Semiconductor Corporation
TQM130NB06CR RLG
Infineon Technologies