FDN5630
onsemi
onsemi
MOSFET N-CH 60V 1.7A SUPERSOT3
$0.49
Available to order
Reference Price (USD)
3,000+
$0.15652
6,000+
$0.14642
15,000+
$0.13632
30,000+
$0.12925
75,000+
$0.12852
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance FDN5630 from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, FDN5630 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
STMicroelectronics
STO33N60M6
Infineon Technologies
IRF2807ZPBF
Fairchild Semiconductor
FDI8442
Infineon Technologies
IRFHS8342TRPBF
IXYS
IXTQ50N20P
Vishay Siliconix
SIHP7N60E-E3
Vishay Siliconix
SQM50034EL_GE3
Diodes Incorporated
DMTH10H005LCT
Vishay Siliconix
IRF9530SPBF
Infineon Technologies